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| SUR2X60-12 Ultra Fast Recovery Epitaxial Diodes Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O P Q Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 SUR2X60-12 VRSM V 1200 VRRM V 1200 R S T U V W Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=50oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 100 52 700 450 500 400 440 1000 1050 800 810 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot VISOL Md Weight TC=25oC 50/60Hz, RMS _ IISOL<1mA Mounting torque Terminal connection torque (M4) o C 180 2500 1.5/13 1.5/13 30 W V~ Nm/lb.in. g SUR2X60-12 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=60A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 2.2 0.5 14 2.15 2.50 1.65 8.3 0.7 0.05 Unit IR mA VF VTO rT RthJC RthCK trr IRM V V m K/W IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC _ VR=540V; IF=60A; -diF/dt=480A/us; L<0.05uH; TVJ=100 C o 40 32 60 36 ns A FEATURES * International standard package miniBLOC (ISOTOP compatible) * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR2X60-12 Ultra Fast Recovery Epitaxial Diodes 90 A 80 70 IF 60 50 6 40 30 20 2 10 0 0 1 VF 2 3 V 4 0 10 100 -diF/dt typ. 4 max. TVJ= 25C TVJ=100C TVJ=150C Qr 12 C 10 8 IF=60A IF=120A IF=60A IF=30A TVJ=100C VR= 540V 80 A 60 IRM TVJ=100C VR=540V IF=60A IF=120A IF=60A IF=30A max. 40 typ. 20 0 A/s 1000 0 200 400 -diF/dt 600 800 A/s 1000 Fig. 1 Forward current versus voltage drop. 1.4 1.2 Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. 60 1200 ns 1000 VFR 800 tfr 600 400 tfr 1.0 s 0.8 max. TVJ=100C VR=540V V 50 40 VFR 30 20 1.0 Kf IRM 0.8 0.6 trr 0.6 IF=60A IF=120A IF=60A IF=30A 0.4 QR 0.4 0.2 0.2 0.0 0 40 TJ 80 120 C 160 0.0 0 200 400 600 -diF/dt A/s 800 1000 typ. 10 0 0 200 400 600 diF/dt TVJ=125C IF=60A 200 0 A/s 1000 800 Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Fig. 7 Transient thermal impedance junction to case. |
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